Hybrid single quantum well InP/Si nanobeam lasers for silicon photonics.
نویسندگان
چکیده
We report on a hybrid InP/Si photonic crystal nanobeam laser emitting at 1578 nm with a low threshold power of ~14.7 μW. Laser gain is provided from a single InAsP quantum well embedded in a 155 nm InP layer bonded on a standard silicon-on-insulator wafer. This miniaturized nanolaser, with an extremely small modal volume of 0.375(λ/n)(3), is a promising and efficient light source for silicon photonics.
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ورودعنوان ژورنال:
- Optics letters
دوره 38 22 شماره
صفحات -
تاریخ انتشار 2013